FDC6306P Datasheet PDF - ON Semiconductor

●The FDC6306P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.

● Low gate charge

● Fast switching speed

● High performance Trench technology for extremely low RDS (ON)

● Small footprint

● Low profile