FDC633N Datasheet PDF - Fairchild

●N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package. Features SuperSOT-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.