FDC637BNZ Datasheet PDF - ON Semiconductor

●The FDC637BNZ is a 2.5V specified N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. It is suitable for use in DC-to-DC converter, load switching and battery protection applications.

● Fast switching speed

● High performance Trench technology for extremely low RDS (ON)

● Manufactured using green packaging material

● Halide-free

● >2kV Typical HBM ESD protection level

● 8nC Typical low gate charge