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FDC6506P_Q
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FDC6506P_Q Datasheet PDF (6 Pages)
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FDC6506P_Q Specifications

TYPE
DESCRIPTION
Case/Package
SSOT-6
Polarity
P-CH
Power Dissipation
960 mW
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
1.8A
Rise Time
8 ns
Fall Time
8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

FDC6506P_Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Size-Length
2.9 mm
Size-Width
1.6 mm
Size-Height
1.1 mm

FDC6506P_Q Documents

Fairchild
6 Pages / 0.06 MByte

FDC6506 Documents

Fairchild
Dual P-Channel Logic Level PowerTrench MOSFET
Fairchild
FAIRCHILD SEMICONDUCTOR FDC6506P Dual MOSFET, Dual P Channel, 3A, -30V, 170mohm, -10V, -1.8V
ON Semiconductor
Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 2Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Fairchild
MOSFET SSOT-6P-CH -30V
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