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FDC6561AN Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TSOT-23-6

Description:

FAIRCHILD SEMICONDUCTOR FDC6561AN Dual MOSFET, Dual N Channel, 2.5A, 30V, 0.082Ω, 10V, 1.8V

Pictures:

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Product Pictures

Documentation:

FDC6561AN Datasheet (6 Pages)

FDC6561AN Datasheet PDF (6 Pages)

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FDC6561AN Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Voltage Rating (DC)

30.0 V

Current Rating

2.50 A

Case/Package

TSOT-23-6

Number of Positions

6 Position

Drain to Source Resistance (on) (Rds)

0.082 Ω

Polarity

N-Channel, Dual N-Channel

Power Dissipation

960 mW

Threshold Voltage

1.8 V

Input Capacitance

220 pF

Gate Charge

2.30 nC

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

2.50 A

Rise Time

10.0 ns

Input Capacitance (Ciss)

220pF @15V(Vds)

Input Power (Max)

700 mW

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

0.96 W

View Datasheet >

FDC6561AN Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

3 mm

Size-Width

1.7 mm

Size-Height

1 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

FDC6561AN Environmental

FDC6561AN Export Classifications

FDC6561AN Function Overview

FDC6561AN Documents

FDC6561AN Datasheet

Fairchild

6 Pages / 0.17 MByte

FDC6561AN Other Datasheet PDF

Fairchild

8 Pages / 0.09 MByte

FDC6561AN Drawing Diagrams

Fairchild

1 Pages / 0.04 MByte

FDC6561AN Other References

Fairchild

1 Pages / 0.15 MByte

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FAIRCHILD SEMICONDUCTOR FDC6561AN Dual MOSFET, Dual N Channel, 2.5A, 30V, 0.082Ω, 10V, 1.8V

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