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FDC6561AN_Q
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FDC6561AN_Q Datasheet PDF (6 Pages)
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FDC6561AN_Q Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SSOT-6
Number of Channels
2 Channel
Drain to Source Resistance (on) (Rds)
95 mΩ
Polarity
N-CH
Power Dissipation
900 mW
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
2.5A
Rise Time
10 ns
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃

FDC6561AN_Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.6 mm
Size-Height
1.1 mm

FDC6561AN_Q Documents

Fairchild
6 Pages / 0.1 MByte
Fairchild
6 Pages / 0.1 MByte

FDC6561 Documents

Fairchild
Dual N-Channel Logic Level PowerTrenchTM MOSFET
Fairchild
FAIRCHILD SEMICONDUCTOR FDC6561AN Dual MOSFET, Dual N Channel, 2.5A, 30V, 0.082Ω, 10V, 1.8V
ON Semiconductor
MOSFET 2N-CH 30V 2.5A SSOT6
Fairchild
Dual N-Channel Logic Level PowerTrench MOSFET
Fairchild
MOSFET N-Channel 30V
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