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Part Datasheet Search > MOSFETs > Fairchild > FDD10AN06A0_Q Datasheet PDF
FDD10AN06A0_Q
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FDD10AN06A0_Q Datasheet PDF (13 Pages)
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FDD10AN06A0_Q Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
9.40 mΩ
Polarity
N-Channel
Power Dissipation
135 W
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
50.0 A
Rise Time
79 ns
Fall Time
32 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

FDD10AN06A0_Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm

FDD10AN06A0_Q Documents

Fairchild
13 Pages / 0.84 MByte
Fairchild
11 Pages / 0.23 MByte

FDD10AN06A0 Documents

Fairchild
FDD10AN06A0 Trans MOSFET N-CH 60V 11A 3Pin (2+Tab ) TO-252AA T/R RoHS
ON Semiconductor
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
Fairchild
Trans MOSFET N-CH 60V 50A 3Pin TO-252AA T/R
ON Semiconductor
N-Channel PowerTrench® MOSFET, 60V, 50A, 10.5mΩ, TO-252 3L (DPAK), 2500-REEL
Fairchild
MOSFET 60V 50A 0.15Ω/VGS=1V
Fairchild
MOSFET N-CH 60V 11A D-PAK
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