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FDD6N50TM
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FDD6N50TM Datasheet PDF (9 Pages)
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FDD6N50TM Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
760 mΩ
Polarity
N-Channel
Power Dissipation
89 W
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
6.00 A
Input Capacitance (Ciss)
9400pF @25V(Vds)
Input Power (Max)
89 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
89W (Tc)

FDD6N50TM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FDD6N50TM Documents

Fairchild
9 Pages / 0.44 MByte
Fairchild
18 Pages / 0.94 MByte

FDD6N50 Documents

Fairchild
N-Channel UniFETTM MOSFET 500V, 6A, 900m
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Trans MOSFET N-CH 500V 6A 3Pin(2+Tab) DPAK T/R
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Trans MOSFET N-CH 500V 6A 3Pin(2+Tab) DPAK T/R
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Trans MOSFET N-CH 500V 5.5A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
N-Channel UniFETTM MOSFET 500V, 6A, 900mΩ
Fairchild
Trans MOSFET N-CH 500V 6A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 500V 6A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
MOSFET N-CH 500V 5.5A DPAK
ON Semiconductor
MOSFET N-CH 500V 6A DPAK
Fairchild
MOSFET N-CH 500V 5.5A DPAK
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