FDG1024NZ Datasheet PDF - Fairchild

●The FDG1024NZ is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

● Very low level gate drive requirements allowing operation in 1.5V circuits (VGS (th) <1V)

● Very small package outline

● ±8V Gate to source voltage

● 1.2A Continuous drain current

● 6A Pulsed drain current