FDG6306P Datasheet PDF - ON Semiconductor

●The FDG6306P is a dual P-channel MOSFET rugged gate version advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V). It is suitable for use with battery management and load switch applications.

● Low gate charge

● High performance Trench technology for extremely low RDS (ON)

● Compact industry standard surface-mount-package

● ±12V Gate to source voltage

● -0.6A Continuous drain current

● -2A Pulsed drain current