FDMC510P-F106 Datasheet PDF - ON Semiconductor

●This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for R, switching performance and ruggedness.

●Features

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● Max. RDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A

● Max. RDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A

● Max. RDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A

● Max. RDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A

● High-Performance Trench Technology for Extremely Low RDS(on)

● High Power and Current Handling Capability in a Widely Used Surface-Mount Package

● 100% UIL Tested

● Termination is Lead-Free and RoHS Compliant

● HBM ESD capability level >2KV Typical