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Part Datasheet Search > MOSFETs > ON Semiconductor > FDN338P Datasheet PDF
FDN338P
$ 0.116
FDN338P Datasheet PDF (5 Pages)
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FDN338P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.13 Ω
Power Dissipation
500 mW
Threshold Voltage
800 mV
Drain to Source Voltage (Vds)
20 V
Rise Time
11 ns
Maximum Forward Voltage (Max)
1.2 V
Input Capacitance (Ciss)
451pF @10V(Vds)
Input Power (Max)
460 mW
Fall Time
6.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW

FDN338P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.92 mm
Size-Width
1.4 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃

FDN338P Documents

ON Semiconductor
5 Pages / 0.31 MByte
ON Semiconductor
5 Pages / 0.31 MByte
ON Semiconductor
5 Pages / 0.26 MByte
ON Semiconductor
9 Pages / 0.6 MByte

FDN338 Documents

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P-Channel 2.5V Specified PowerTrench® MOSFET
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FAIRCHILD SEMICONDUCTOR FDN338P MOSFET Transistor, P Channel, 1.6A, 20V, 130mohm, -4.5V, -800mV
ON Semiconductor
MOSFET Transistor, P Channel, 1.6A, 20V, 130mohm, -4.5V, -800mV
Fairchild
P-Channel Logic Level Enhancement Mode Field Effect Transistor
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