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FDN338P
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FDN338P Datasheet PDF (5 Pages)
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FDN338P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-20.0 V
Current Rating
-1.60 A
Case/Package
SOT-23-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.088 Ω
Polarity
P-Channel
Power Dissipation
500 mW
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
-20.0 V
Breakdown Voltage (Gate to Source)
±8.00 V
Continuous Drain Current (Ids)
1.60 A
Rise Time
11 ns
Input Capacitance (Ciss)
451pF @10V(Vds)
Input Power (Max)
460 mW
Fall Time
6.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500mW (Ta)

FDN338P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.92 mm
Size-Width
1.4 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FDN338P Documents

Fairchild
5 Pages / 0.31 MByte
Fairchild
5 Pages / 0.31 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
5 Pages / 0.26 MByte
Fairchild
4 Pages / 0.08 MByte
Fairchild
1 Pages / 0.15 MByte

FDN338 Documents

Fairchild
P-Channel 2.5V Specified PowerTrench® MOSFET
Fairchild
FAIRCHILD SEMICONDUCTOR FDN338P MOSFET Transistor, P Channel, 1.6A, 20V, 130mohm, -4.5V, -800mV
ON Semiconductor
MOSFET Transistor, P Channel, 1.6A, 20V, 130mohm, -4.5V, -800mV
Fairchild
P-Channel Logic Level Enhancement Mode Field Effect Transistor
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