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FDN342P Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

FAIRCHILD SEMICONDUCTOR FDN342P MOSFET Transistor, P Channel, 2A, -20V, 0.062Ω, -4.5V, 1.05V

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Documentation:

FDN342P Datasheet (5 Pages)

Package Outline Dimension on1 Page

Part Numbering System on1 Page

FDN342P Datasheet PDF (5 Pages)

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FDN342P Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

-20.0 V

Current Rating

-2.00 A

Case/Package

SOT-23-3

Drain to Source Resistance (on) (Rds)

0.062 Ω

Polarity

P-Channel

Power Dissipation

500 mW

Threshold Voltage

1.05 V

Input Capacitance

635 pF

Gate Charge

6.30 nC

Drain to Source Voltage (Vds)

20 V

Breakdown Voltage (Gate to Source)

±12.0 V

Continuous Drain Current (Ids)

2.00 A

Rise Time

8 ns

Input Capacitance (Ciss)

635pF @10V(Vds)

Input Power (Max)

460 mW

Fall Time

19 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

500mW (Ta)

View Datasheet >

FDN342P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

2.92 mm

Size-Width

1.4 mm

Size-Height

0.94 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

FDN342P Environmental

FDN342P Export Classifications

FDN342P Function Overview

FDN342P Documents

FDN342P Datasheet

Fairchild

5 Pages / 0.13 MByte

FDN342P Other Datasheet PDF

Fairchild

10 Pages / 0.86 MByte

FDN342P Drawing Diagrams

Fairchild

1 Pages / 0.04 MByte

FDN342 Documents

FDN342P Datasheet PDF

Fairchild

FAIRCHILD SEMICONDUCTOR FDN342P MOSFET Transistor, P Channel, 2A, -20V, 0.062Ω, -4.5V, 1.05V

FDN342P Datasheet PDF

ON Semiconductor

Small Signal Field-Effect Transistor, 2A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

FDN342P_NL Datasheet PDF

Fairchild

P-Channel 2.5V Specified PowerTrench MOSFET

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