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Part Datasheet Search > MOSFETs > Fairchild > FDN358P Datasheet PDF
FDN358P
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FDN358P Datasheet PDF (5 Pages)
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FDN358P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-30.0 V
Current Rating
-1.50 A
Case/Package
SOT-23-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
200 mΩ
Polarity
P-Channel
Power Dissipation
560 mW
Input Capacitance
182 pF
Gate Charge
4.00 nC
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
1.50 A
Rise Time
13 ns
Input Capacitance (Ciss)
182pF @15V(Vds)
Input Power (Max)
460 mW
Fall Time
2 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500mW (Ta)

FDN358P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
2.92 mm
Size-Width
1.4 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃

FDN358P Documents

Fairchild
5 Pages / 0.11 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
4 Pages / 0.08 MByte
Fairchild
1 Pages / 0.15 MByte

FDN358 Documents

Fairchild
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild
FAIRCHILD SEMICONDUCTOR FDN358P MOSFET Transistor, P Channel, 1.6A, 30V, 200mohm, -10V, -1.9V
ON Semiconductor
MOSFET P-CH 30V 1.5A SSOT3
Fairchild
Single P-Channel, Logic Level, PowerTrench MOSFET
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