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Part Datasheet Search > MOSFETs > ON Semiconductor > FDN358P Datasheet PDF
FDN358P
$ 0.141
FDN358P Datasheet PDF (6 Pages)
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FDN358P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Power Dissipation
560 mW
Threshold Voltage
1.9 V
Drain to Source Voltage (Vds)
30 V
Rise Time
13 ns
Input Capacitance (Ciss)
182pF @15V(Vds)
Input Power (Max)
460 mW
Fall Time
2 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW

FDN358P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.92 mm
Size-Width
1.4 mm
Size-Height
0.94 mm

FDN358P Documents

ON Semiconductor
6 Pages / 0.26 MByte
ON Semiconductor
7 Pages / 0.22 MByte
ON Semiconductor
9 Pages / 0.6 MByte

FDN358 Documents

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P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild
FAIRCHILD SEMICONDUCTOR FDN358P MOSFET Transistor, P Channel, 1.6A, 30V, 200mohm, -10V, -1.9V
ON Semiconductor
MOSFET P-CH 30V 1.5A SSOT3
Fairchild
Single P-Channel, Logic Level, PowerTrench MOSFET
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