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Part Datasheet Search > MOSFETs > ON Semiconductor > FDN359AN Datasheet PDF
FDN359AN
$ 0.162

FDN359AN Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
MOSFETs
Case Package:
SOT-23-3
Description:
Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Documentation:
FDN359AN Datasheet (6 Pages)
Part Numbering System on6 Page
FDN359AN Datasheet PDF (6 Pages)
View Datasheet
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FDN359AN Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
46 mΩ
Power Dissipation
500 mW
Threshold Voltage
1.6 V
Drain to Source Voltage (Vds)
30 V
Rise Time
13 ns
Input Capacitance (Ciss)
480pF @10V(Vds)
Input Power (Max)
460 mW
Fall Time
4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW
View Datasheet >

FDN359AN Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Cut Tape (CT)
Size-Length
2.92 mm
Size-Width
1.4 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃
View Datasheet >

FDN359AN Documents

FDN359AN Datasheet
ON Semiconductor
6 Pages / 0.26 MByte
FDN359AN Other Datasheet PDF
ON Semiconductor
7 Pages / 0.2 MByte
FDN359AN Notice File
ON Semiconductor
9 Pages / 0.6 MByte

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