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FF200R12KT3EHOSA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

IGBTs

Case Package:

AG-62MM-1

Description:

Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin Tray

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

FF200R12KT3EHOSA1 Datasheet (8 Pages)FF200R12KT3EHOSA1 User Reference Manual Guide (36 Pages)FF200R12KT3EHOSA1 Application Note (33 Pages)

FF200R12KT3EHOSA1 Datasheet PDF (8 Pages)

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FF200R12KT3EHOSA1 Specifications

TYPE

DESCRIPTION

Number of Pins

7 Pin

Case/Package

AG-62MM-1

Power Dissipation

1050000 mW

Breakdown Voltage (Collector to Emitter)

1200 V

Input Capacitance (Cies)

14nF @25V

Input Power (Max)

1050 W

Operating Temperature (Max)

125 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

1050000 mW

View Datasheet >

FF200R12KT3EHOSA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tray

Size-Length

106.4 mm

Size-Width

61.4 mm

Size-Height

29 mm

Operating Temperature

-40℃ ~ 125℃

View Datasheet >

FF200R12KT3EHOSA1 Environmental

FF200R12KT3EHOSA1 Export Classifications

FF200R12KT3EHOSA1 Function Overview

FF200R12KT3EHOSA1 Documents

FF200R12KT3EHOSA1 Datasheet

Infineon

8 Pages / 0.41 MByte

FF200R12KT3EHOSA1 User Reference Manual Guide

Infineon

36 Pages / 3.45 MByte

FF200R12KT3EHOSA1 Other Datasheet PDF

Infineon

73 Pages / 2.93 MByte

FF200R12KT3EHOSA1 Application Note

Infineon

33 Pages / 2.24 MByte

FF200R12KT3 Documents

FF200R12KT3 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1.2kV 295A 7Pin 62MM

FF200R12KT3 Datasheet PDF

Eupec

Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

FF200R12KT3EHOSA1 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin Tray

FF200R12KT3_E Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin 62MM-1 Tray

FF200R12KT3HOSA1 Datasheet PDF

Infineon

Igbt, Module, n-Ch, 1.2kV, 295A

FF200R12KT3-E Datasheet PDF

Infineon

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