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Part Datasheet Search > IGBTs > Infineon > FF200R12KT4 Datasheet PDF
FF200R12KT4
$ 98.431
FF200R12KT4 Datasheet PDF (8 Pages)
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FF200R12KT4 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
7 Pin
Case/Package
AG-62MM-1
Number of Positions
7 Position
Polarity
NPN
Power Dissipation
1.1 kW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
14nF @25V
Input Power (Max)
1100 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
1.1 kW

FF200R12KT4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
106.4 mm
Size-Width
61.4 mm
Size-Height
30.9 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

FF200R12KT4 Documents

Infineon
8 Pages / 0.45 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
1 Pages / 0.01 MByte
Infineon
40 Pages / 6.73 MByte

FF200R12 Documents

Infineon
Trans IGBT Module N-CH 1.2kV 275A 7Pin 62MM
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INFINEON FF200R12KT4 IGBT Array & Module Transistor, Dual NPN, 320A, 1.75V, 1.1kW, 1.2kV, Module
Infineon
IGBT Array & Module Transistor, Dual NPN, 320A, 1.75V, 1.1kW, 1.2kV, Module
Infineon
Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin Tray
Infineon
Trans IGBT Module N-CH 1.2kV 295A 7Pin 62MM
Infineon
Trans IGBT Module N-CH 1200V 240A 1100000mW 7Pin 62MM Tray
Infineon
Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin 62MM-1 Tray
Infineon
Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin Tray
Infineon
Trans IGBT Module N-CH 1200V 200A 7Pin 62MM-1
Infineon
Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin 62MM-1 Tray
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