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Part Datasheet Search > IGBTs > Infineon > FF300R12KE4HOSA1 Datasheet PDF
FF300R12KE4HOSA1
$ 80.874
FF300R12KE4HOSA1 Datasheet PDF (8 Pages)
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FF300R12KE4HOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
7 Pin
Case/Package
62MM-1
Number of Positions
7 Position
Polarity
NPN
Power Dissipation
1.6 kW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
19nF @25V
Input Power (Max)
1600 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
1600000 mW

FF300R12KE4HOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
106.4 mm
Size-Width
61.4 mm
Size-Height
30.9 mm
Operating Temperature
-40℃ ~ 150℃

FF300R12KE4HOSA1 Documents

Infineon
8 Pages / 0.44 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte
Infineon
2 Pages / 0.09 MByte

FF300R12KE4 Documents

Infineon
INFINEON FF300R12KE4 IGBT Array & Module Transistor, Dual NPN, 460A, 1.75V, 1.6kW, 1.2kV, Module
Infineon
IGBT Array & Module Transistor, Dual NPN, 460A, 1.75V, 1.6kW, 1.2kV, Module
Infineon
Our well-known 62mm C-series 1200V 3-level IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF300R12KE4).
Infineon
Our well-known 62mm C-series 1200V dual IGBT modules with trench/fieldstop IGBT4, Emitter Controlled diode and M5 power terminals are the right choice for your design.
Infineon
Our well-known 62mm C-series 1200V 3-level IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF300R12KE4).
Infineon
Trans IGBT Module N-CH 1200V 300A 7Pin Tray
Infineon
Our well-known 62mm C-series 1200V dual IGBT modules with trench/fieldstop IGBT4, Emitter Controlled diode and M5 power terminals are the right choice for your design.
Infineon
Our well-known 62mm 1200V dual IGBT modules with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material are the right choice for your design.
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