$ 160.427

FF450R12KE4 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

IGBTs

Case Package:

AG-62MM-1

Description:

Trans IGBT Module N-CH 1200V 520A 2400000mW 7Pin 62MM Tray

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

FF450R12KE4 Datasheet (8 Pages)FF450R12KE4 User Reference Manual Guide (36 Pages)FF450R12KE4 Application Note (40 Pages)

FF450R12KE4 Datasheet PDF (8 Pages)

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FF450R12KE4 Specifications

TYPE

DESCRIPTION

Mounting Style

Screw

Number of Pins

7 Pin

Case/Package

AG-62MM-1

Power Rating

2.4 kW

Number of Positions

7 Position

Polarity

NPN

Power Dissipation

2.4 kW

Breakdown Voltage (Collector to Emitter)

1200 V

Input Capacitance (Cies)

28nF @25V

Input Power (Max)

2400 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

2.4 kW

View Datasheet >

FF450R12KE4 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tray

Size-Length

106.4 mm

Size-Width

61.4 mm

Size-Height

30.5 mm

Operating Temperature

-40℃ ~ 150℃

View Datasheet >

FF450R12KE4 Environmental

FF450R12KE4 Function Overview

FF450R12KE4 Documents

FF450R12KE4 Datasheet

Infineon

8 Pages / 0.44 MByte

FF450R12KE4 User Reference Manual Guide

Infineon

36 Pages / 3.45 MByte

FF450R12KE4 Other Datasheet PDF

Infineon

73 Pages / 2.93 MByte

FF450R12KE4 Application Note

Infineon

40 Pages / 6.73 MByte

FF450R12KE4 Notice File

Infineon

2 Pages / 0.09 MByte

FF450R12 Documents

FF450R12KT4 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 580A 2400000mW 7Pin 62MM Tray

FF450R12KE4 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 520A 2400000mW 7Pin 62MM Tray

FF450R12ME4 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1.2kV 675A 11Pin

FF450R12KT4HOSA1 Datasheet PDF

Infineon

INFINEON FF450R12KT4HOSA1 IGBT Array & Module Transistor, Dual NPN, 580A, 1.75V, 2.4kW, 1.2kV, Module

FF450R12ME4EB11BPSA1 Datasheet PDF

Infineon

EconoDUAL™ 3 1200V Common Emitter IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, and PressFIT contact technology. For 3-level NPC2 topologies. Suited for 1000V and 1500V solar inverters in combination with a standard half-bridge EconoDUAL™ 3 IGBT module (e.g. FF450R12ME4_B11).

FF450R12ME4_B11 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1.2kV 675A 11Pin

FF450R12KE4HOSA1 Datasheet PDF

Infineon

IGBT Array & Module Transistor, Dual NPN, 520A, 1.75V, 2.4kW, 1.2kV, Module

FF450R12ME3 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 600A 2100000mW 11Pin ECONOD-3 Tray

FF450R12ME4BOSA1 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 675A 2250000mW 11Pin ECONOD-3 Tray

FF450R12KE4EHOSA1 Datasheet PDF

Infineon

Our well-known 62mm C-series 1200V Common Emitter IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF450R12KE4).