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Part Datasheet Search > IGBTs > Infineon > FF450R12KT4HOSA1 Datasheet PDF
FF450R12KT4HOSA1
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FF450R12KT4HOSA1 Datasheet PDF (9 Pages)
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FF450R12KT4HOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
7 Pin
Case/Package
62MM-1
Number of Positions
7 Position
Polarity
NPN
Power Dissipation
2.4 kW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
28nF @25V
Input Power (Max)
2400 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2400000 mW

FF450R12KT4HOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
106.4 mm
Size-Width
61.4 mm
Size-Height
30.9 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

FF450R12KT4HOSA1 Documents

Infineon
9 Pages / 0.64 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte

FF450R12KT4 Documents

Infineon
Trans IGBT Module N-CH 1200V 580A 2400000mW 7Pin 62MM Tray
Infineon
INFINEON FF450R12KT4HOSA1 IGBT Array & Module Transistor, Dual NPN, 580A, 1.75V, 2.4kW, 1.2kV, Module
Infineon
Trans IGBT Module N-CH 1200V 450A 7Pin 62MM-1
Infineon
Trans IGBT Module N-CH 1200V 580A 7Pin 62MM
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