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Part Datasheet Search > Infineon > FF75R12RT4HOSA1 Datasheet PDF
FF75R12RT4HOSA1
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FF75R12RT4HOSA1 Datasheet PDF (9 Pages)
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FF75R12RT4HOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
7 Pin
Case/Package
AG-34MM-1
Power Dissipation
395 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
4.3nF @25V
Input Power (Max)
395 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Junction Temperature (Max)
150 ℃
Power Dissipation (Max)
395000 mW

FF75R12RT4HOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
94 mm
Size-Width
34 mm
Size-Height
30.2 mm
Operating Temperature
-40℃ ~ 150℃

FF75R12RT4HOSA1 Documents

Infineon
9 Pages / 0.57 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
1 Pages / 0.03 MByte
Infineon
40 Pages / 6.73 MByte

FF75R12RT4 Documents

Infineon
Trans IGBT Module N-CH 1.2kV 75A 7Pin
Infineon
Trans IGBT Module N-CH 1200V 75A 395000mW 7Pin 34MM-1 Tray
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