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FGA20S120M Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

IGBTs

Case Package:

TO-3-3

Description:

Trans IGBT Chip N-CH 1200V 40A 348000mW 3Pin(3+Tab) TO-3PN Tube

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FGA20S120M Datasheet PDF (8 Pages)

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FGA20S120M Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-3-3

Number of Positions

3 Position

Power Dissipation

348 W

Breakdown Voltage (Collector to Emitter)

1200 V

Input Power (Max)

348 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

348000 mW

FGA20S120M Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

FGA20S120M Environmental

FGA20S120M Export Classifications

FGA20S120M Function Overview

FGA20S120M Documents

FGA20S120M Other Datasheet PDF

ON Semiconductor

8 Pages / 0.71 MByte

FGA20S120M Notice File

ON Semiconductor

6 Pages / 0.51 MByte

FGA20S120 Documents

FGA20S120M Datasheet PDF

Fairchild

Trans IGBT Chip N-CH 1200V 40A 348000mW 3Pin(3+Tab) TO-3PN Rail

FGA20S120M Datasheet PDF

ON Semiconductor

Trans IGBT Chip N-CH 1200V 40A 348000mW 3Pin(3+Tab) TO-3PN Tube

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