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Part Datasheet Search > IGBTs > ON Semiconductor > FGA40N65SMD Datasheet PDF
FGA40N65SMD
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FGA40N65SMD Datasheet PDF (14 Pages)
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FGA40N65SMD Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Power Dissipation
349000 mW
Breakdown Voltage (Collector to Emitter)
650 V
Reverse recovery time
42 ns
Input Power (Max)
349 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
349 W

FGA40N65SMD Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.2 mm
Size-Width
5 mm
Size-Height
20.1 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

FGA40N65SMD Documents

ON Semiconductor
14 Pages / 0.28 MByte
ON Semiconductor
11 Pages / 1.25 MByte
ON Semiconductor
4 Pages / 0.62 MByte

FGA40N65 Documents

ON Semiconductor
Trans IGBT Chip N-CH 650V 80A 349000mW 3Pin(3+Tab) TO-3PN Tube
Fairchild
Trans IGBT Chip N-CH 650V 80A 349000mW 3Pin(3+Tab) TO-3PN Rail
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