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Part Datasheet Search > IGBTs > ON Semiconductor > FGB20N60SF Datasheet PDF
FGB20N60SF
$ 1.367
FGB20N60SF Datasheet PDF (8 Pages)
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FGB20N60SF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-2
Power Dissipation
208000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
208 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
208000 mW

FGB20N60SF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FGB20N60SF Documents

ON Semiconductor
8 Pages / 0.37 MByte
ON Semiconductor
18 Pages / 0.94 MByte
ON Semiconductor
2 Pages / 0.05 MByte

FGB20N60 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR FGB20N60SF IGBT Single Transistor, General Purpose, 20A, 600V, 208W, 600V, TO-263, 3Pins
Fairchild
Trans IGBT Chip N-CH 600V 40A 3Pin(2+Tab) TO-263AB T/R
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 208000mW 3Pin(2+Tab) D2PAK T/R
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 208000mW 3Pin(2+Tab) D2PAK T/R
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3Pin(2+Tab) D2PAK T/R
Fairchild
Trans IGBT Chip N-CH 600V 40A 3Pin D2PAK T/R
ON Semiconductor
600V, 20A, 2.2V, D2PAK
Fairchild
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3/2
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