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Part Datasheet Search > IGBTs > Fairchild > FGB20N60SFD Datasheet PDF
FGB20N60SFD
$ 0.836
FGB20N60SFD Datasheet PDF (9 Pages)
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FGB20N60SFD Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Dissipation
83 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
34 ns
Input Power (Max)
208 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
208 W

FGB20N60SFD Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FGB20N60SFD Documents

Fairchild
9 Pages / 0.41 MByte
Fairchild
18 Pages / 0.94 MByte

FGB20N60 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR FGB20N60SF IGBT Single Transistor, General Purpose, 20A, 600V, 208W, 600V, TO-263, 3Pins
Fairchild
Trans IGBT Chip N-CH 600V 40A 3Pin(2+Tab) TO-263AB T/R
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 208000mW 3Pin(2+Tab) D2PAK T/R
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 208000mW 3Pin(2+Tab) D2PAK T/R
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3Pin(2+Tab) D2PAK T/R
Fairchild
Trans IGBT Chip N-CH 600V 40A 3Pin D2PAK T/R
ON Semiconductor
600V, 20A, 2.2V, D2PAK
Fairchild
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3/2
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