FGD3N60LSDTM-T Datasheet PDF - ON Semiconductor

●Fairchild"s Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.

●Features

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● High Current Capability

● Very Low Saturation Voltage : VCE(sat) = 1.2 V at IC = 3 A

● High Input Impedance