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Part Datasheet Search > BJTs > ON Semiconductor > FJN3314RTA Datasheet PDF
FJN3314RTA
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FJN3314RTA Datasheet PDF (5 Pages)
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FJN3314RTA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-92-3
Power Dissipation
0.3 W
Breakdown Voltage (Collector to Emitter)
50 V
hFE Min
68
Input Power (Max)
300 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Gain Bandwidth
250 MHz
Power Dissipation (Max)
300 mW

FJN3314RTA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Box
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm

FJN3314RTA Documents

ON Semiconductor
5 Pages / 0.15 MByte
ON Semiconductor
7 Pages / 0.31 MByte
ON Semiconductor
2 Pages / 0.04 MByte
ON Semiconductor
5 Pages / 1.04 MByte

FJN3314 Documents

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Trans Digital BJT NPN 50V 100mA 300mW 3Pin TO-92 Bulk
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NPN Epitaxial Silicon Transistor with Bias Resistor
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