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Part Datasheet Search > BJTs > ON Semiconductor > FJP13009H2TU Datasheet PDF
FJP13009H2TU
$ 1.251
FJP13009H2TU Datasheet PDF (6 Pages)
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FJP13009H2TU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
4 MHz
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Power Dissipation
100 W
Breakdown Voltage (Collector to Emitter)
400 V
hFE Min
15 @5A, 5V
Input Power (Max)
100 W
DC Current Gain (hFE)
8
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
100000 mW

FJP13009H2TU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
9.9 mm
Size-Width
4.5 mm
Size-Height
9.2 mm
Operating Temperature
-65℃ ~ 150℃

FJP13009H2TU Documents

ON Semiconductor
6 Pages / 0.21 MByte
ON Semiconductor
7 Pages / 0.27 MByte
ON Semiconductor
29 Pages / 1.96 MByte

FJP13009H2 Documents

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ON Semiconductor
TRANS NPN 400V 12A TO-220
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Trans GP BJT NPN 400V 12A 3Pin(3+Tab) TO-220 T/R
ON Semiconductor
Trans GP BJT NPN 400V 12A 100000mW 3Pin(3+Tab) TO-220 Tube
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