FM24C04B-G Datasheet PDF - Cypress Semiconductor

●The FM24C04B-G is a 4-Kbit non-volatile Ferroelectric Random Access Memory (F-RAM), performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. Also F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. It is capable of supporting 1014 read/write cycles or 100million times more write cycles than EEPROM.

● High-endurance 100 trillion read/writes

● NoDelay™ writes

● Low power consumption

● 100µA at 100kHz Active current

● 4µA Typical standby current

● Advanced high-reliability ferroelectric process

● Supports legacy timings for 100 and 400kHz