FM24CL16B-G Datasheet PDF - Cypress Semiconductor

●The FM24CL16B-G is a 16-Kbit non-volatile Ferroelectric Random Access Memory (F-RAM), performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, this performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. Also F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. This is capable of supporting 1014 read/write cycles or 100 million times more write cycles than EEPROM.

● High-endurance 100trillion read/writes

● NoDelay™ writes

● Fast 2-wire serial interface

● Up to 1MHz frequency

● Direct hardware replacement for serial EEPROM

● Supports legacy timings for 100 and 400kHz

● Low power consumption

● 100µA Active current at 100kHz

● 3µA Typical standby current

● 2.7 to 3.65V Voltage operation