FM25CL64B-G Datasheet PDF - Cypress Semiconductor

●The FM25CL64B-G is a 64Kbit (8K × 8bit) SPI FRAM (Ferroelectric Random Access Memory) device in 8 pin SOIC package. This non volatile memory reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating complexities, overhead and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, the FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the device offers substantial write endurance compared with other non volatile memories. The FM25CL64B provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.

● High endurance 100 trillion (10^14) read/writes

● Automotive grade AEC-Q100 qualified

● Advanced high reliability ferroelectric process

● Up to 20MHz frequency

● Sophisticated write protection scheme

● Low power consumption

● Active current of 200µA at 1MHz

● Typical standby current of 3µA

● Low voltage operation from 2.7V to 3.65V

● Operating temperature range from -40°C to 85°C