FM25V02-G Datasheet PDF - Cypress Semiconductor

●Description

●The  FM25V02  is  a  256-kilobit  nonvolatile  memory employing  an  advanced  ferroelectric  process.  A

●ferroelectric  random  access  memory  or  F-RAM  is nonvolatile  and  performs  reads  and  writes  like  a

●RAM. It provides reliable data retention for 10 years while  eliminating  the  complexities,  overhead,  and

●system  level  reliability  problems  caused  by  Serial Flash and other nonvolatile memories.

●Features

●256K bit Ferroelectric Nonvolatile RAM

●Organized as 32,768 x 8 bits

●High Endurance 100 Trillion (1014) Read/Writes

●10 Year Data Retention

●NoDelay™ Writes

●Advanced High-Reliability Ferroelectric Process

●Very Fast Serial Peripheral Interface - SPI

●Up to 40 MHz Frequency

●Direct Hardware Replacement for Serial Flash

●SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

●Write Protection Scheme

●Hardware Protection

●Software Protection

●Device ID

●Device ID reads out Manufacturer ID & Part ID

●Low Voltage, Low Power

●Low Voltage Operation 2.0V – 3.6V

●90  A Standby Current (typ.)

●5  A Sleep Mode Current (typ.)

●Industry Standard Configurations

●Industrial Temperature -40 C to +85 C

●8-pin “Green”/RoHS SOIC Package

●8-pin “Green”/RoHS TDFN Package