FM25V10-GTR Datasheet PDF - Cypress Semiconductor

●Description

●The FM25V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.

●Features

●1M bit Ferroelectric Nonvolatile RAM

●• Organized as 131,072 x 8 bits

●• High Endurance 100 Trillion (1014) Read/Writes

●• 10 Year Data Retention

●• NoDelay™ Writes

●• Advanced High-Reliability Ferroelectric Process

●Very Fast Serial Peripheral Interface - SPI

●• Up to 40 MHz Frequency

●• Direct Hardware Replacement for Serial Flash

●• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

●Write Protection Scheme

●• Hardware Protection

●• Software Protection

●Device ID and Serial Number

●• Device ID reads out Manufacturer ID & Part ID

●• Unique Serial Number (FM25VN10)

●Low Voltage, Low Power

●• Low Voltage Operation 2.0V – 3.6V

●• 90μA Standby Current (typ.)

●• 5μA Sleep Mode Current (typ.)

●Industry Standard Configurations

●• Industrial Temperature -40 C to +85 C

●• 8-pin “Green”/RoHS SOIC Package