FM25W256-G Datasheet PDF - Cypress Semiconductor

●The FM25W256-G is a 256Kbit (32K × 8bit) SPI FRAM (Ferroelectric Random Access Memory) device in 8 pin SOIC package. This non volatile memory reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating complexities, overhead and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, the FM25W256 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without need for data polling. In addition, the device offers substantial write endurance compared with other non volatile memories. The FM25W256 provides substantial benefits to users of serial EEPROM or flash as hardware drop-in replacement.

● High endurance 100 trillion (10^14) read/writes

● Automotive grade AEC-Q100 qualified

● Advanced high reliability ferroelectric process

● Up to 20MHz frequency

● Sophisticated write protection scheme

● Low power consumption

● Active current of 250µA at 1MHz

● Typical standby current of 15µA

● Wide operating voltage range from 2.7V to 5.5V

● Operating temperature range from -40°C to 85°C