FM28V020-TGTR Datasheet PDF - Cypress Semiconductor

● 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8

● High-endurance 100 trillion (1014) read/writes

● 151-year data retention (see the Data Retention and Endurance table)

● NoDelay™ writes

● Page mode operation

● Advanced high-reliability ferroelectric process

● SRAM compatible

● Industry-standard 32 K × 8 SRAM pinout

● 70-ns access time, 140-ns cycle time

● Superior to battery-backed SRAM modules

● No battery concerns

● Monolithic reliability

● True surface mount solution, no rework steps

● Superior for moisture, shock, and vibration

● Resistant to negative voltage undershoots

● Low power consumption

● Active current 5 mA (typ)

● Standby current 90 µA (typ)

● Low-voltage operation: VDD = 2.0 V to 3.6 V

● Industrial temperature: -40 °C to +85 °C