FM28V100-TG Datasheet PDF - Cypress Semiconductor

●The FM28V100-TG is a 1MB F-RAM Nonvolatile Memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM28V100 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by chip enable or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM28V100 ideal for nonvolatile memory applications requiring frequent or rapid writes.

● High-endurance 100 trillion read/writes

● NoDelay™ Writes

● Page mode operation to 30ns cycle time

● Advanced high-reliability ferroelectric process

● SRAM compatible

● Superior to battery-backed SRAM modules

● No battery concerns

● Monolithic reliability

● True surface mount solution, no rework steps

● Superior for moisture, shock and vibration

● Low power consumption