FOD3184SD Datasheet PDF - ON Semiconductor

●The FOD3184 is a 3A output current, high-speed MOSFET/IGBT gate drive optocoupler. It consists of an aluminium gallium arsenide (AlGaAs) light emitting diode (LED) optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high-frequency driving of power MOSFETS/IGBT used in Plasma Display Panels (PDPs), motor control inverter applications, and high-performance DC-DC converters.The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead-free solder compliance.

●Features

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● High noise immunity characterized by 35kV/µs common mode rejection

● Guaranteed operating temperature range of -40°C to 100°C

● 3A minimum peak output current for medium power MOSFET/IGBT

● Fast switching speed

● 210ns max. propagation delay

● 65ns max. pulse width distortion

● Fast output rise/fall time

● Offers lower dynamic power dissipation

● 250kHZ maximum switching speed

● Wide VCC operating range from 15V to 30V

● Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)

● Under voltage lockout protection (UVLO) with hysteresis - optimized for driving IGBTs

● Safety and regulatory approvals

● UL1577, 3,750 VACRMS for 1 min.

● Minimum creepage distance of 8.0mm

● IEC60747-5-2, 1,414 peak working insulation voltage (pending approval)

● Minimum insulation thickness of 0.5mm

● Minimum clearance distance of 8.0mm (Option T)