FOD814A3SD Datasheet PDF - ON Semiconductor

●The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

●Features

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● AC Input Response (FOD814)

● Current Transfer Ratio in Selected Groups:

● FOD617A: 40-80%

● FOD617B: 63-125%

● FOD617C: 100-200%

● FOD617D: 160-320%

● FOD814: 20-300%

● FOD814A: 50-150%

● FOD817: 50-600%

● FOD817A: 80-160%

● FOD817B: 130-260%

● FOD817C: 200-400%

● FOD817D: 300-600%

● Minimum BVCEO of 70 V Guaranteed

● UL1577, 5,000 VACRMS for 1 Minute

● Safety and Regulatory Approvals

● DIN EN/IEC60747-5-5