$ 45.595

FP25R12W2T4BOMA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Case Package:

AG-EASY2B-1

Description:

Trans IGBT Module N-CH 1200V 39A 175000mW 23Pin EASY2B-2 Tray

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

FP25R12W2T4BOMA1 Datasheet (1 Pages)FP25R12W2T4BOMA1 User Reference Manual Guide (36 Pages)FP25R12W2T4BOMA1 Application Note (33 Pages)

FP25R12W2T4BOMA1 Datasheet PDF (1 Pages)

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FP25R12W2T4BOMA1 Specifications

TYPE

DESCRIPTION

Number of Pins

23 Pin

Case/Package

AG-EASY2B-1

Power Dissipation

175 W

Breakdown Voltage (Collector to Emitter)

1200 V

Input Capacitance (Cies)

1.45nF @25V

Input Power (Max)

175 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

175000 mW

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FP25R12W2T4BOMA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tray

Operating Temperature

-40℃ ~ 150℃

View Datasheet >

FP25R12W2T4BOMA1 Environmental

FP25R12W2T4BOMA1 Function Overview

FP25R12W2T4BOMA1 Documents

FP25R12W2T4BOMA1 Datasheet

Infineon

1 Pages / 0.07 MByte

FP25R12W2T4BOMA1 User Reference Manual Guide

Infineon

36 Pages / 3.45 MByte

FP25R12W2T4BOMA1 Other Datasheet PDF

Infineon

1 Pages / 0.07 MByte

FP25R12W2T4BOMA1 Application Note

Infineon

33 Pages / 2.24 MByte

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FP25R12W2T4BOMA1 Datasheet PDF

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EasyPIM™ 2B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.