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Part Datasheet Search > IGBTs > Infineon > FP30R06W1E3 Datasheet PDF
FP30R06W1E3
$ 27.972
FP30R06W1E3 Datasheet PDF (12 Pages)
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FP30R06W1E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
23 Pin
Case/Package
EASY1B-1
Number of Positions
23 Position
Polarity
N-Channel
Power Dissipation
115 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
115000 mW

FP30R06W1E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
62.8 mm
Size-Width
33.8 mm
Size-Height
12 mm
Operating Temperature
-40℃ ~ 150℃

FP30R06W1E3 Documents

Infineon
12 Pages / 0.93 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte

FP30R06W1 Documents

Infineon
Trans IGBT Module N-CH 600V 37A 115000mW 23Pin EASY1B Tray
Infineon
Trans IGBT Module N-CH 600V 37A 23Pin EASY1B-2
Infineon
Trans IGBT Module N-CH 600V 37A 115000mW 20Pin EASY1B-1 Tray
Infineon
Trans IGBT Module N-CH 600V 37A 115000mW 23Pin AG-EASY1B-2 Tray
Eupec
Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23
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