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Part Datasheet Search > Infineon > FP35R12W2T4BOMA1 Datasheet PDF
FP35R12W2T4BOMA1
$ 52.13
FP35R12W2T4BOMA1 Datasheet PDF (12 Pages)
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FP35R12W2T4BOMA1 Specifications

TYPE
DESCRIPTION
Number of Pins
23 Pin
Case/Package
AG-EASY2B-1
Power Dissipation
215 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
2nF @25V
Input Power (Max)
215 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
215000 mW

FP35R12W2T4BOMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
56.7 mm
Size-Width
48 mm
Size-Height
12 mm
Operating Temperature
-40℃ ~ 150℃

FP35R12W2T4BOMA1 Documents

Infineon
12 Pages / 1.04 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte

FP35R12W2T4 Documents

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EasyPIM™ 2B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material.
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