$ 169.095

FP50R12KT4GBOSA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

IGBTs

Case Package:

ECONO3-3

Description:

INFINEON FP50R12KT4GBOSA1 IGBT Array & Module Transistor, NPN, 50A, 1.85V, 280W, 1.2kV, Module

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

FP50R12KT4GBOSA1 Datasheet (12 Pages)FP50R12KT4GBOSA1 User Reference Manual Guide (36 Pages)FP50R12KT4GBOSA1 Application Note (33 Pages)

FP50R12KT4GBOSA1 Datasheet PDF (12 Pages)

View Datasheet

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FP50R12KT4GBOSA1 Specifications

TYPE

DESCRIPTION

Mounting Style

Screw

Number of Pins

35 Pin

Case/Package

ECONO3-3

Number of Positions

35 Position

Polarity

NPN

Power Dissipation

280 W

Breakdown Voltage (Collector to Emitter)

1200 V

Input Capacitance (Cies)

2.8nF @25V

Input Power (Max)

280 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

280000 mW

View Datasheet >

FP50R12KT4GBOSA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tray

Operating Temperature

-40℃ ~ 150℃

View Datasheet >

FP50R12KT4GBOSA1 Environmental

FP50R12KT4GBOSA1 Function Overview

FP50R12KT4GBOSA1 Documents

FP50R12KT4GBOSA1 Datasheet

Infineon

12 Pages / 0.82 MByte

FP50R12KT4GBOSA1 User Reference Manual Guide

Infineon

36 Pages / 3.45 MByte

FP50R12KT4GBOSA1 Other Datasheet PDF

Infineon

73 Pages / 2.93 MByte

FP50R12KT4GBOSA1 Application Note

Infineon

33 Pages / 2.24 MByte

FP50R12KT4GBOSA1 Features Description Parametrics

Infineon

1 Pages / 0.07 MByte

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FP50R12KT4GBOSA1 Datasheet PDF

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