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Part Datasheet Search > ON Semiconductor > FPF2G120BF07ASP Datasheet PDF
FPF2G120BF07ASP
$ 100.815
FPF2G120BF07ASP Datasheet PDF
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FPF2G120BF07ASP Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
HF2CA-N32
Power Dissipation
156000 mW
Breakdown Voltage (Collector to Emitter)
650 V
Input Power (Max)
156 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
156000 mW

FPF2G120BF07ASP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 150℃ (TJ)

FPF2G120BF07ASP Documents

ON Semiconductor
22 Pages / 2.67 MByte
ON Semiconductor
2 Pages / 0.12 MByte

FPF2G120BF07 Documents

ON Semiconductor
Trans IGBT Module N-CH 650V 40A 156000mW 17Pin Case F2 Tray
ON Semiconductor
Trans IGBT Module N-CH 650V 40A 156000mW Tray
Fairchild
Trans IGBT Module N-CH 650V 40A 17Pin Case F2
Fairchild
Trans IGBT Module N-CH 650V 40A 17Pin Case F2
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