FQA13N50CF_F109 Datasheet PDF - Fairchild

●Description

●This  N-Channel  enhancement  mode  power  MOSFET  is produced  using  Fairchild  Semiconductor’s  proprietary  planar stripe  and  DMOS  technology.  This  advanced  MOSFET

●technology  has  been  especially  tailored  to  reduce  on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for

●switched  mode  power  supplies,  active  power  factor  correction (PFC), and electronic lamp ballasts.

●Features

●• 15 A, 500 V, RDS(on)= 480mΩ (Max.) @ VGS= 10 V,ID= 7.5 A

●• Low Gate Charge (Typ.43 nC)

●• Low Crss(Typ.20 pF)

●• 100% Avalanche Tested

●• Fast Recovery Body Diode (Typ.100 ns)