FQA24N50F Datasheet PDF - Fairchild

●General Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies,

●where the body diode is used such as phase-shift ZVS, basic full-bridge topology.

●Features

●• 24A, 500V, RDS(on)= 0.2Ω@VGS= 10 V

●• Low gate charge ( typical 90 nC)

●• Low Crss ( typical 55 pF)

●• Fast switching

●• 100% avalanche tested

●• Improved dv/dt capability

●• Fast recovery body diode ( max, 250ns )