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Part Datasheet Search > MOSFETs > ON Semiconductor > FQB12P20TM Datasheet PDF
FQB12P20TM
$ 1.009
FQB12P20TM Datasheet PDF (8 Pages)
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FQB12P20TM Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.36 Ω
Power Dissipation
120 W
Drain to Source Voltage (Vds)
200 V
Rise Time
195 ns
Input Capacitance (Ciss)
920pF @25V(Vds)
Input Power (Max)
3.13 W
Fall Time
60 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3130 mW

FQB12P20TM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm

FQB12P20TM Documents

ON Semiconductor
8 Pages / 0.3 MByte
ON Semiconductor
11 Pages / 1.02 MByte
ON Semiconductor
7 Pages / 0.87 MByte

FQB12P20 Documents

Fairchild
200V P-Channel MOSFET
ON Semiconductor
Power Field-Effect Transistor
Fairchild
FAIRCHILD SEMICONDUCTOR FQB12P20TM MOSFET Transistor, P Channel, -11.5A, -200V, 0.36Ω, -10V, -5V
ON Semiconductor
P-Channel QFET® MOSFET -200V, -11.5A, 470mΩ
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