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Part Datasheet Search > MOSFETs > Fairchild > FQB27N25TM Datasheet PDF
FQB27N25TM
$ 0.411
FQB27N25TM Datasheet PDF
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FQB27N25TM Specifications

TYPE
DESCRIPTION
Case/Package
TO-263
Drain to Source Resistance (on) (Rds)
110 mΩ
Polarity
N-Channel
Power Dissipation
180 W
Drain to Source Voltage (Vds)
250 V
Breakdown Voltage (Drain to Source)
250 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
25.5 A

FQB27N25TM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown

FQB27N25TM Documents

Fairchild
7 Pages / 0.4 MByte

FQB27N25 Documents

Fairchild
250V N-Channel MOSFET
ON Semiconductor
250V, 26A, 108mΩ, D2PAK N-Channel UltraFET®, TO-263 2L (D2PAK), 800-TAPE REEL
Fairchild
D2PAK N-CH 250V 25.5A
Fairchild
Trans MOSFET N-CH 250V 25.5A 3Pin TO-263AB T/R
Fairchild
MOSFET N-CH 250V 25.5A D2PAK
ON Semiconductor
MOSFET N-CH 250V 25.5A D2PAK
ON Semiconductor
Trans MOSFET N-CH 250V 25.5A 3Pin TO-263AB T/R
ON Semiconductor
250V, 26A, 108mΩ, D2PAK N-Channel UltraFET®, TO-263 2L (D2PAK), 800-TAPE REEL
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