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FQB4N80TM Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

High Voltage MOS

Case Package:

TO-263-3

Description:

FAIRCHILD SEMICONDUCTOR FQB4N80TM Power MOSFET, N Channel, 3.9A, 800V, 2.8Ω, 10V, 5V

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Documentation:

FQB4N80TM Datasheet (9 Pages)

Package Outline Dimension on7 Page 8 Page

Part Numbering System on2 Page

FQB4N80TM Datasheet PDF (9 Pages)

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FQB4N80TM Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

800 V

Current Rating

3.90 A

Case/Package

TO-263-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

2.8 Ω

Polarity

N-Channel

Power Dissipation

130 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

800 V

Breakdown Voltage (Drain to Source)

800 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

3.90 A

Rise Time

45 ns

Input Capacitance (Ciss)

880pF @25V(Vds)

Input Power (Max)

3.13 W

Fall Time

35 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

3.13W (Ta), 130W (Tc)

View Datasheet >

FQB4N80TM Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Height

4.83 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

FQB4N80TM Environmental

FQB4N80TM Export Classifications

FQB4N80TM Function Overview

FQB4N80TM Documents

FQB4N80TM Datasheet

Fairchild

9 Pages / 0.77 MByte

FQB4N80TM Other Datasheet PDF

Fairchild

18 Pages / 0.94 MByte

FQB4N80TM Notice File

Fairchild

7 Pages / 0.87 MByte

FQB4N80 Documents

FQB4N80 Datasheet PDF

Fairchild

FQB4N80 Datasheet PDF

ON Semiconductor

N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω, 800-REEL

FQB4N80TM Datasheet PDF

Fairchild

FAIRCHILD SEMICONDUCTOR FQB4N80TM Power MOSFET, N Channel, 3.9A, 800V, 2.8Ω, 10V, 5V

FQB4N80TM Datasheet PDF

ON Semiconductor

Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R

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