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Part Datasheet Search > High Voltage MOS > Fairchild > FQB4N80TM Datasheet PDF
FQB4N80TM
$ 1
FQB4N80TM Datasheet PDF (9 Pages)
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FQB4N80TM Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
800 V
Current Rating
3.90 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
2.8 Ω
Polarity
N-Channel
Power Dissipation
130 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
3.90 A
Rise Time
45 ns
Input Capacitance (Ciss)
880pF @25V(Vds)
Input Power (Max)
3.13 W
Fall Time
35 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.13W (Ta), 130W (Tc)

FQB4N80TM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQB4N80TM Documents

Fairchild
9 Pages / 0.77 MByte
Fairchild
18 Pages / 0.94 MByte
Fairchild
7 Pages / 0.87 MByte

FQB4N80 Documents

Fairchild
N-Channel QFET® MOSFET 800V, 3.9A, 3.6 Ω
ON Semiconductor
N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω, 800-REEL
Fairchild
FAIRCHILD SEMICONDUCTOR FQB4N80TM Power MOSFET, N Channel, 3.9A, 800V, 2.8Ω, 10V, 5V
ON Semiconductor
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
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